In-Situ and At-Speed Modeling and Characterization of Logic Interconnect Device Considering Front-End/Back-End Interaction
Choongyeun Cho, Daeik D. Kim, and Jonghae Kim
Silicon Monolithic Integrated Circuits and RF Systems (SiRF) 2009, Jan 2009
Abstract
The paper presents a logic interconnect device (LID) to model digital circuit with near back-end-of-line (BEOL) effect, and to measure system performance. It is driven by a product inverter-based logic circuit, and it is loaded with near-BEOL wiring. The LID ring oscillator is measured and analyzed in 65nm SOI CMOS. The methodology offers in-situ characterization of near-BEOL interconnect parasitics, and dielectric constant in product circuits. It captures front-end-of-line (FEOL) and near-BEOL interactions, distinguished in deeply scaled CMOS.Download
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