A 80GHz Complementary LC-VCO with 8.2GHz Frequency Tuning in 65nm SOI CMOS
Daeik Kim, Jonghae Kim, and Choongyeun Cho
IEEE Journal of Solid-State Circuits, in preparation
Abstract
A complementary LC-VCO oscillating at 81.6GHz with 8.2GHz, or 10.6% frequency tuning range is realized in 65nm SOI CMOS. The VCO core consumes 10.5mW at 1.5V, and exhibits phase noise of -101dBc/Hz at 10MHz offset from 80GHz. The frequency tuning range specification conversion to capacitance tuning range design parameter, VCO yield based on the parasitic component variation, and phase noise figure-of-merit with frequency tuning range are analytically solved. The paper proposes an effective oscillation condition for nanometer CMOS technology that considers the FET output resistance. The nanometer FET performance is enhanced by gate-to-contact relaxation with an area trade-off. The FET high-speed performance, design margin, and process variability are examined for the VCO design with a 300mm wafer measurements.
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