The Process Variability of a V-band LC-VCO in 65nm SOI CMOS

Daeik Kim, Jonghae Kim, and Choongyeun Cho

IEEE RFIC Symposium 2008, June 2008

Abstract

The process variability of a V-band LC-VCO implemented in 65nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300mm wafers in 65nm SOI are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6GHz, and it shows 90% yield from 65.1 to 67.9GHz.

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